Title :
Performance improvement of triple-junctions GaAs-based solar cell using SiO2-nanopillars/SiO2/TiO2 graded-index anti-reflection coating
Author :
Jheng-Jie Liu ; Wen-Jeng Ho ; Jhih-Kai Syu ; Yi-Yu Lee ; Ching-Fuh Lin ; Hung-Pin Shiao
Author_Institution :
Dept. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
Abstract :
This paper demonstrate experimentally the top-cell external quantum efficiency (EQE) improving of the triple-junction GaAs-based solar cell using a SiO2-nanopillars/SiO2/TiO2 graded-index anti-reflection coating (GI-ARC). The reflectance and EQE of the solar cells with SiO2/TiO2 double-layer ARC and with SiO2-nanopillars/SiO2/TiO2 GI-ARC are measured and compared. The reflectance of cell with SiO2-nanopillar/SiO2/TiO2 GI-ARC had most favorable low reflectance between 550-700 nm wavelengths. Therefore, the EQE enhancement of 5.88% on top-cell and -1.56% on middle-cell and the best current matching were achieved.
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; inorganic compounds; solar cells; titanium compounds; EQE enhancement; GI-ARC; GaAs; SiO2-SiO2-TiO2; current matching; double-layer ARC; external quantum efficiency; graded-index anti-reflection coating; nanopillars; triple-junction gallium arsenide-based solar cell; Broadband communication; Coatings; Current measurement; Photovoltaic cells; Reflectivity; Surface treatment; Wavelength measurement; SiO2-nanopillars; current matching; external quantum efficiency; graded-index anti-reflection coating; triple-junction solar cell;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6466075
