The side effects on N-Type FinFET Devices

Fin-FET is so expected because it protects I_off current from outrageously leaky as the channel length gets shorten continuously. It thus keeps the threshold voltage and the swing from rolling-up. Those good characteristics are manifested by the fully depleted region and the lack of leaky body as the gate is biased. In this study, the fin-thickness effect is to be noticeably discussed. The correlated swings are to be determined and compared between the two kinds. The P-well Vt adjustment at two different energies, 10KeV and 6KeV, are also put into split.