• DocumentCode
    597659
  • Title

    Study on the characterizations and applications of the pH-Sensor with GZO/glass extended-gate FET

  • Author

    Jung-Lung Chiang ; Chia-Yu Kuo

  • Author_Institution
    Dept. of Electron. Eng., Chung Chou Univ. of Sci. & Technol., Yuanlin, Taiwan
  • fYear
    2013
  • fDate
    2-4 Jan. 2013
  • Firstpage
    498
  • Lastpage
    501
  • Abstract
    The GZO thin films of the thickness about 200~250nm were deposited on the glass which used as a pH sensor head based on the extended-gate field-effect transistor (EGFET) by r. f. sputtering system in this study. The pH sensing characteristics of the GZO/glass EGFET sensing structure were investigated and a semiconductor parameter analyzer (Keithley 4200) was used to measure the drain-source current versus gate-source voltage curves in various buffer solutions. In the experimental results, it can be obtained that the various pH sensitivities of the GZO pH-EGFET at different measuring temperature ambiance. Furthermore we also found that the pH sensitivity is increasing with temperature increased, and the pH response is a good linearity in this study. In addition, the GZO thin film was found that the resistance was about 8.37×10-3Ω-cm and the average of transmittance was about 80% in the visible range.
  • Keywords
    chemical sensors; field effect transistors; gadolinium compounds; glass; pH measurement; semiconductor thin films; sputter deposition; GZO thin films; GZO-glass EGFET sensing structure; Gd2Zr2O7; RF sputtering system; drain source current; extended gate field effect transistor; gate source voltage curves; pH response; pH sensitivity; pH sensor; semiconductor parameter analyzer; size 200 nm to 250 nm; Glass; Logic gates; Plasma temperature; Sensitivity; Temperature measurement; Temperature sensors; EGFET; GZO; Sensitivity; pH-sensor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2013 IEEE 5th International
  • Conference_Location
    Singapore
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4673-4840-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2013.6466089
  • Filename
    6466089