Characteristics of Al-doped ZnO nanorods synthesized by the hydrothermal process at Low temperature

Author

Jung-Lung Chiang ; Sui-Chu Tsai

Author_Institution

Dept. of Electron. Eng., Chung Chou Univ. of Sci. & Technol., Yuanlin, Taiwan

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

502

Lastpage

504

Abstract

In this study, the Al-doped ZnO (AZO) nanorods were synthesized on silicon substrate by the hydrothermal process. The SiO₂/silicon substrate was submerged horizontally in 0.06M mixture solution of zinc nitrate hexahydrate (Zn(NO₃)₂·6H₂O), diethylenetriamine (DETA), and doped the solution of aluminium nitrate, nonahydrate (Al(NO₃)₃·9H₂O) at about 90°C for 4h. It has been shown that the ZnO nanorods are of single hexagonal phase of wurtzite structure. SEM image revealed that the range of diameter of ZnO nanorods about 83 ~ 425 nm. In addition, the ZnO nanorods/Si₂O/Si structure was utilized as a pH sensor head to immerse into various pH buffer solutions. Experimental results were found that the Al-doped ZnO nanorods have a pH response. Afterwards, the sensor head will be designed the extended-gate field-effect transistor (EGFET) to study the pH-sensing characteristics in the different pH buffer solutions.

Keywords

II-VI semiconductors; aluminium; chemical sensors; field effect transistors; liquid mixtures; nanofabrication; nanorods; nanosensors; organic compounds; pH measurement; scanning electron microscopy; wide band gap semiconductors; zinc compounds; EGFET; SEM image; SiO₂-Si; ZnO:Al; aluminium nitrate; diethylenetriamine; extended-gate field-effect transistor; hydrothermal process; mixture solution; nanorod synthesis; nonahydrate; pH buffer solutions; pH sensor; silicon substrate; single hexagonal phase; time 4 h; wurtzite structure; zinc nitrate hexahydrate; Nanostructured materials; Silicon; Substrates; Temperature; Zinc oxide; Al-doped ZnO; nanorods; pH-sensing; synthesized;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466090

Filename

6466090