High-gate-injection tunneling field effect transistor for flash memory applications

Author

Huiwei Wu ; Shiqiang Qin ; Yimao Cai ; Qianqian Huang ; Ru Huang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, a tunneling filed effect transistor (TFET) based flash memory with high-gate injection efficiency is proposed and experimentally demonstrated. The measured injection efficiency (gate current (I_g) / drain current (I_d)) during programming is more than 10^-4 in TFET flash devices which is two orders higher than that of the conventional ones. It is considered that this high injection efficiency is attributed to the strong channel electric field near source region. The results imply that this TFET flash device is promising for low power operation.

Keywords

field effect transistors; flash memories; low-power electronics; tunnel transistors; TFET flash devices; channel electric field; drain current; flash memory applications; high-gate injection efficiency; high-gate-injection tunneling field effect transistor; low power operation; measured injection efficiency; near source region; Current measurement; Electric fields; Flash memory; Logic gates; Nonvolatile memory; Programming; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6466678

Filename

6466678