Title :
High-gate-injection tunneling field effect transistor for flash memory applications
Author :
Huiwei Wu ; Shiqiang Qin ; Yimao Cai ; Qianqian Huang ; Ru Huang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper, a tunneling filed effect transistor (TFET) based flash memory with high-gate injection efficiency is proposed and experimentally demonstrated. The measured injection efficiency (gate current (Ig) / drain current (Id)) during programming is more than 10-4 in TFET flash devices which is two orders higher than that of the conventional ones. It is considered that this high injection efficiency is attributed to the strong channel electric field near source region. The results imply that this TFET flash device is promising for low power operation.
Keywords :
field effect transistors; flash memories; low-power electronics; tunnel transistors; TFET flash devices; channel electric field; drain current; flash memory applications; high-gate injection efficiency; high-gate-injection tunneling field effect transistor; low power operation; measured injection efficiency; near source region; Current measurement; Electric fields; Flash memory; Logic gates; Nonvolatile memory; Programming; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466678
