Title :
A 300 V thin layer SOI nLDMOS based on RESURF and MFP
Author :
Zhuo Wang ; Wan Xu ; Tao Chen ; Xin Zhou ; Yuanyuan Zhao ; Zhengcai Chen ; Miao Zhou ; Ming Qiao ; Zhiqiang Xiao ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A 300 V thin layer SOI nLDMOS based on reduced surface electric field (RESURF) and multiple field plates (MFP) is proposed in this paper. RESURF principle and MFP technology are adopted to modulate the electric field distribution and improve the breakdown voltage (BV). Device structure parameters are discussed to achieve a trade-off between breakdown voltage and on-resistance. Compared with conventional structures, the achieved 300 V nLDMOS not only owns high BV, but also possesses a simple manufacturing process and a low cost.
Keywords :
electric breakdown; power MOSFET; MFP; RESURF; breakdown voltage; electric field distribution; multiple field plates; nLDMOS; reduced surface electric field; thin layer SOI; voltage 300 V; Doping; Electric breakdown; Electric fields; Junctions; Manufacturing processes; Metals; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466722
