Title :
Modeling of power devices for enabling smart energy consumption
Author :
Miura-Mattausch, M. ; Iizuka, Tetsuya ; Miyake, M. ; Kikuchihara, Hideyuki ; Mattausch, Hans Jurgen
Author_Institution :
HiSIM Res. Center, Hiroshima Univ., Higashi-Hiroshima, Japan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
We have developed the surface-potential-based model HiSIM_HV for high-voltage MOSFET. The model solves the Poisson equation explicitly within the MOSFET part. The resistive drift region is modeled by considering the excess carrier concentration together with the velocity saturation effect. The internal node potential is determined to preserve the current continuity between the MOSFET part and the resistive drift part. The validity of the model has been investigated, where the special focus is given on the self-heating effect. The thermal network introduced to model the effect is verified with measurements. Investigations to simulate the temperature distribution within the chip are also discussed.
Keywords :
Poisson equation; energy consumption; power MOSFET; semiconductor device models; surface potential; temperature distribution; HiSIM_HV; Poisson equation; current continuity; excess carrier concentration; high-voltage MOSFET; internal node potential; power devices; resistive drift region; self-heating effect; smart energy consumption; surface-potential-based model; temperature distribution; thermal network; velocity saturation effect; Biological system modeling; Integrated circuit modeling; Mathematical model; Poisson equations; Power MOSFET; Semiconductor device modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466726
