Title :
Performance improvement of reactive magnetron sputtering ZnO-TFT after annealing in N2 ambient
Author :
Hui-Kun Yao ; Lei Sun ; You-Feng Geng ; Yong-Qi Li ; Yu-Qian Xia ; Jian Cai ; Wen-Tong Zhu ; De-Dong Han
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Bottom-gated ZnO-TFTs have been fabricated under different conditions, and the devices´ current-voltage properties are reported. The ZnO films are prepared by reactive magnetron sputtering, and then annealed in N2 ambient at 300°C for 1hour. The characteristics of the surface morphologies and microstructures of the samples were studied respectively. We also studied the effect of N2 annealing on the samples´ physical structures and electrical characteristics. After annealing, the experimental results show that ZnO-TFTs can exhibit excellent electrical properties while Vg changes from -10 to 70V, and Ion/Ioff ratio is larger than 106 and OFF-state current is smaller than 1.2×10-10A as Vd=10V.
Keywords :
II-VI semiconductors; annealing; crystal microstructure; semiconductor thin films; sputter deposition; surface morphology; thin film transistors; wide band gap semiconductors; zinc compounds; N2 ambient annealing; OFF-state current; ZnO; bottom-gated zinc oxide-TFT fabrication; current-voltage properties; electrical characteristics; electrical properties; microstructures; performance improvement; physical structures; reactive magnetron sputtering; surface morphology; temperature 300 degC; time 1 h; voltage -10 V to 70 V; zinc oxide-based thin film transistor; Annealing; Argon; Films; Sputtering; Surface morphology; Surface topography; Zinc oxide; Annealing; Reactive magnetron sputtering; ZnO-TFT;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466745
