Fabrication and performance of pentacene thin-film transistors with SiO2/PMMA bilayer dielectric

Author

Xurong Zhao ; Sumei Wang ; Keke Ma

Author_Institution

Key Lab. for Liquid-Solid Struct. Evolution & Process. of Mater. (Minist. of Educ.), Shandong Univ., Jinan, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, the organic pentacene-based thin film transistors with SiO₂/PMMA bilayer dielectric were fabricated and the device performance improvement with the varying PMMA concentration was investigated. When the PMMA concentration decreases from 60mg/ml to 20 mg/ml, the device mobility increases from 0.06 to 0.1 cm²/Vs, and the on/off current ratio increases from 10³ to 10⁴. Top-contact OTFT devices with double PMMA layer were also fabricated. The results showed that the second PMMA layer can modify the dielectric/semiconductor interface and therefore improve the device performance.

Keywords

organic field effect transistors; semiconductor-insulator boundaries; silicon compounds; thin film transistors; PMMA concentration; SiO₂; bilayer dielectric; double PMMA layer; organic pentacene based thin film transistors; pentacene thin-film transistor; top contact OTFT device; Dielectrics; Films; Organic thin film transistors; Pentacene; Performance evaluation; Rough surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6466746

Filename

6466746