Title :
Fabrication and performance of pentacene thin-film transistors with SiO2/PMMA bilayer dielectric
Author :
Xurong Zhao ; Sumei Wang ; Keke Ma
Author_Institution :
Key Lab. for Liquid-Solid Struct. Evolution & Process. of Mater. (Minist. of Educ.), Shandong Univ., Jinan, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper, the organic pentacene-based thin film transistors with SiO2/PMMA bilayer dielectric were fabricated and the device performance improvement with the varying PMMA concentration was investigated. When the PMMA concentration decreases from 60mg/ml to 20 mg/ml, the device mobility increases from 0.06 to 0.1 cm2/Vs, and the on/off current ratio increases from 103 to 104. Top-contact OTFT devices with double PMMA layer were also fabricated. The results showed that the second PMMA layer can modify the dielectric/semiconductor interface and therefore improve the device performance.
Keywords :
organic field effect transistors; semiconductor-insulator boundaries; silicon compounds; thin film transistors; PMMA concentration; SiO2; bilayer dielectric; double PMMA layer; organic pentacene based thin film transistors; pentacene thin-film transistor; top contact OTFT device; Dielectrics; Films; Organic thin film transistors; Pentacene; Performance evaluation; Rough surfaces;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466746
