Title :
Highly linear OTA with 3rd-order nonlinearity superposition techniques for Gm-C low-pass filter with 34dBm IIP3
Author :
Jiayi Wang ; Chen Li ; Le Ye ; Huailin Liao ; Ru Huang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A highly linear operational trans-conductance amplifier (OTA) with 3rd-order nonlinearity superposition technique is proposed. For achieving high linearity, a native threshold voltage NMOS working in linear region is utilized to obtain the positive 3rd-order nonlinear form to compensate the negative 3rd-order nonlinear form generated by a normal threshold voltage NMOS which is also working in linear region. Based on the proposed highly linear OTA with 42dBm OIP3, a 4th-order butterworth Gm-C low-pass filter with a tunable cut-off frequency from 1MHz to 10MHz is demonstrated in a standard 0.13μm CMOS technology. The filter achieves 34dBm in-band IIP3, consumes 9.9mW from 1.2V supply voltage, and occupies 0.62mm2 silicon area.
Keywords :
CMOS integrated circuits; elemental semiconductors; low-pass filters; operational amplifiers; silicon; 3rd-order nonlinearity superposition techniques; 4th-order butterworth Gm-C low-pass filter; OIP3; Si; frequency 1 MHz to 10 MHz; highly linear OTA; highly linear operational transconductance amplifier; in-band IIP3; linear region; native threshold voltage NMOS working; negative 3rd-order nonlinear form; normal threshold voltage NMOS; positive 3rd-order nonlinear form; power 9.9 mW; size 0.13 mum; standard CMOS technology; tunable cut-off frequency; voltage 1.2 V; Cutoff frequency; Linearity; Low pass filters; MOS devices; Maximum likelihood detection; Nonlinear filters; Power harmonic filters;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466756
