A very low specific on-resistance high-voltage SOI lateral MOSFET

A silicon-on-insulator buried layer multiple trenches (SOI BMT) metal-oxide-semiconductor-field-effect-transistor (MOSFET) with very low specific on-resistance (R_{on, sp}) is proposed in this paper. Based on the research of the SOI multiple trenches MOSFET (SOI MT MOSFET) with low R_{on, sp}, an P-type buried layer is introduced on top of the BOX in the proposed structure, which increases the doping concentration in the N-drift region and further reduces R_{on, sp}. The very low R_{on, sp} of 6.8 mΩ·cm² with BV of 345 V for SOI BMT MOSFET is hence obtained by 2-D simulation TCAD TOOL MEDICI. Comparing with the SOI MT MOSFET, R_{on, sp} is reduced by 12%, and BV is not deteriorated.