Title :
Future logic device technologies beyond the 28nm node
Author :
Dong-Won Kim ; Siyoung Choi ; Jong Shik Yoon ; Chilhee Chung
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Hwasung, South Korea
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The presentation will discuss the future logic technologies beyond the 28 nm node, and novel device structure technologies, which include how far we can extend so far successful conventional semiconductor logic devices. First of all, logic device development trend that has been influenced by the business demands of mobile computing will be summarized. Then development in extended planar device application as a transitional period to 3 dimensional (3D) devices will be discussed followed by the key features FinFETs and future development of novel devices such as nanowire MOSFETs.
Keywords :
MOSFET circuits; logic devices; low-power electronics; mobile computing; nanowires; 3 dimensional devices; 3D devices; FinFET; extended planar device application; mobile computing; nanowire MOSFET; semiconductor logic devices; size 28 nm; transitional period; FinFETs; Logic gates; Market research; Mobile computing; Performance evaluation;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467592
