• DocumentCode
    598286
  • Title

    Future logic device technologies beyond the 28nm node

  • Author

    Dong-Won Kim ; Siyoung Choi ; Jong Shik Yoon ; Chilhee Chung

  • Author_Institution
    Semicond. R&D Center, Samsung Electron. Co., Hwasung, South Korea
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The presentation will discuss the future logic technologies beyond the 28 nm node, and novel device structure technologies, which include how far we can extend so far successful conventional semiconductor logic devices. First of all, logic device development trend that has been influenced by the business demands of mobile computing will be summarized. Then development in extended planar device application as a transitional period to 3 dimensional (3D) devices will be discussed followed by the key features FinFETs and future development of novel devices such as nanowire MOSFETs.
  • Keywords
    MOSFET circuits; logic devices; low-power electronics; mobile computing; nanowires; 3 dimensional devices; 3D devices; FinFET; extended planar device application; mobile computing; nanowire MOSFET; semiconductor logic devices; size 28 nm; transitional period; FinFETs; Logic gates; Market research; Mobile computing; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467592
  • Filename
    6467592