DocumentCode
598286
Title
Future logic device technologies beyond the 28nm node
Author
Dong-Won Kim ; Siyoung Choi ; Jong Shik Yoon ; Chilhee Chung
Author_Institution
Semicond. R&D Center, Samsung Electron. Co., Hwasung, South Korea
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
4
Abstract
The presentation will discuss the future logic technologies beyond the 28 nm node, and novel device structure technologies, which include how far we can extend so far successful conventional semiconductor logic devices. First of all, logic device development trend that has been influenced by the business demands of mobile computing will be summarized. Then development in extended planar device application as a transitional period to 3 dimensional (3D) devices will be discussed followed by the key features FinFETs and future development of novel devices such as nanowire MOSFETs.
Keywords
MOSFET circuits; logic devices; low-power electronics; mobile computing; nanowires; 3 dimensional devices; 3D devices; FinFET; extended planar device application; mobile computing; nanowire MOSFET; semiconductor logic devices; size 28 nm; transitional period; FinFETs; Logic gates; Market research; Mobile computing; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6467592
Filename
6467592
Link To Document