Source/drain ohmic contact optimization for GaSb pMOSFETs

Author

Bing Sun ; Li-Shu Wu ; Hu-Dong Chang ; Wei Zhao ; Bai-Qing Xue ; Hong-Gang Liu

Author_Institution

Microwave Device & IC Dept., Inst. of Microelectron., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, source/drain ohmic contact for GaSb pMOSFETs has been extensively studied and optimized. Different concentrations of HCl-based solutions are used to clean the non-self limiting and non-stable native oxide layer of GaSb surface before source/drain ohmic contact metal deposition. Ni/Pt/Au, Ti/Pt/Au, Ni/Au, and Pt/Ti/Pt/Au contacts to p-type GaSb are investigated. The Ni/Pt/Au ohmic contact shows an optimal specific contact resistance of about 6.89×10^-7Ω·cm² with 1 min RTA at 250°C after the contact metal deposition.

Keywords

MOSFET; contact resistance; gallium compounds; gold; nickel; ohmic contacts; optimisation; platinum; titanium; HCl-based solution; Ni-Au-GaSb; Ni-Pt-Au-GaSb; Pt-Ti-Pt-Au-GaSb; RTA; Ti-Pt-Au-GaSb; nonself limiting; nonstable native oxide layer; optimal specific contact resistance; pMOSFET; source-drain ohmic contact metal deposition; source-drain ohmic contact optimization; temperature 250 degC; time 1 min; Gold; MOSFETs; Nickel; Ohmic contacts; Surface cleaning;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467594

Filename

6467594