Title :
Source/drain ohmic contact optimization for GaSb pMOSFETs
Author :
Bing Sun ; Li-Shu Wu ; Hu-Dong Chang ; Wei Zhao ; Bai-Qing Xue ; Hong-Gang Liu
Author_Institution :
Microwave Device & IC Dept., Inst. of Microelectron., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper, source/drain ohmic contact for GaSb pMOSFETs has been extensively studied and optimized. Different concentrations of HCl-based solutions are used to clean the non-self limiting and non-stable native oxide layer of GaSb surface before source/drain ohmic contact metal deposition. Ni/Pt/Au, Ti/Pt/Au, Ni/Au, and Pt/Ti/Pt/Au contacts to p-type GaSb are investigated. The Ni/Pt/Au ohmic contact shows an optimal specific contact resistance of about 6.89×10-7Ω·cm2 with 1 min RTA at 250°C after the contact metal deposition.
Keywords :
MOSFET; contact resistance; gallium compounds; gold; nickel; ohmic contacts; optimisation; platinum; titanium; HCl-based solution; Ni-Au-GaSb; Ni-Pt-Au-GaSb; Pt-Ti-Pt-Au-GaSb; RTA; Ti-Pt-Au-GaSb; nonself limiting; nonstable native oxide layer; optimal specific contact resistance; pMOSFET; source-drain ohmic contact metal deposition; source-drain ohmic contact optimization; temperature 250 degC; time 1 min; Gold; MOSFETs; Nickel; Ohmic contacts; Surface cleaning;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467594
