Title :
The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs
Author :
Liu Chen ; Yu-Ming Zhang ; Hong-Liang Lu ; Yi-Men Zhang
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´an, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper, The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs has been investigated. The results measured by X-ray photoelectron spectroscopy show that the presence of ZnO can effectively suppress the formation of oxides at the interface between the GaAs and Al2O3. Using Terman method, the interface trap density has been extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.
Keywords :
MOS capacitors; MOSFET; X-ray photoelectron spectra; alumina; atomic layer deposition; gallium arsenide; hole traps; interface states; zinc compounds; Al2O3-ZnO; GaAs; Terman method; X-ray photoelectron spectroscopy; gate dielectric; interface quality; interface trap density; oxide formation; Aluminum oxide; Capacitance-voltage characteristics; Gallium arsenide; Logic gates; Passivation; Zinc oxide; ALD; GaAs metal-oxide-semiconductor capacitor; interface trap density;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467640
