Title :
Effects of radiation on the bipolar resistive switching characteristics of Al/HfO2/ITO structure
Author :
You-Lin Wu ; Chiung-Yi Huang ; Jing-Jenn Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Chi Nan Univ., Puli, Taiwan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The resistive switching characteristics obtained both by single sweep and by forward/backward (F/B) sweep measurements for the Al/HfO2/ITO structure before and after Co60γ-ray irradiation were investigated in this work. It is found that there is a small amount SET voltage increase in the post-irradiated switching characteristics obtained by single sweep measurement, while an obvious SET voltage decrease in that obtained by F/B sweep measurement. For both the single sweep and F/B sweep, the RESET voltage of the post-irradiated switching characteristics exhibits almost no change. On the other hand, a 7 to 8 orders of magnitude decrease in the resistance of high resistance state (RHRS) after irradiation was observed for F/B sweep measurements.
Keywords :
aluminium; gamma-ray effects; hafnium compounds; indium compounds; random-access storage; tin compounds; Al-HfO2-ITO; Co60 γ-ray irradiation; RESET voltage; bipolar resistive switching characteristics; forward/backward sweep measurements; high resistance state; post-irradiated switching characteristics; radiation effects; single sweep measurement; Electrical resistance measurement; Hafnium compounds; Indium tin oxide; Radiation effects; Resistance; Switches; Voltage measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467646
