On the variability and front-back coupling of the low-frequency noise in UTBOX SOI nMOSFETs

Author

Dos Santos, Sara D. ; Simoen, Eddy ; Strobel, V. ; Cretu, B. ; Routoure, J.-M. ; Carin, R. ; Aoulaiche, Marc ; Jurczak, Malgorzata ; Martino, Joao Antonio ; Claeys, Cor

Author_Institution

Imec, Leuven, Belgium

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

A low-frequency (LF) noise characterization of UTBOX SOI nMOSFETs is undertaken in order to understand the variation of the electron mobility in the front-channel. There exists a reasonable correlation between the two parameters, which can be explained by Coulomb scattering at charged traps in the front and back-gate oxide. Exceptions to the observed trend are related to the presence of excess Generation-Recombination (GR) noise, associated with deep levels in the thin Si film.

Keywords

Coulomb blockade; MOSFET; deep levels; electron mobility; elemental semiconductors; semiconductor thin films; silicon; silicon-on-insulator; Coulomb scattering; Si; UTBOX SOI nMOSFET; back-gate oxide; charged traps; deep levels; electron mobility; excess generation-recombination noise; front-back coupling; front-channel; front-gate oxide; low-frequency noise; thin Si film; ultra-thin buried oxide; variability; Correlation; Electron mobility; Low-frequency noise; MOSFETs; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467654

Filename

6467654