Title :
On the variability and front-back coupling of the low-frequency noise in UTBOX SOI nMOSFETs
Author :
Dos Santos, Sara D. ; Simoen, Eddy ; Strobel, V. ; Cretu, B. ; Routoure, J.-M. ; Carin, R. ; Aoulaiche, Marc ; Jurczak, Malgorzata ; Martino, Joao Antonio ; Claeys, Cor
Author_Institution :
Imec, Leuven, Belgium
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A low-frequency (LF) noise characterization of UTBOX SOI nMOSFETs is undertaken in order to understand the variation of the electron mobility in the front-channel. There exists a reasonable correlation between the two parameters, which can be explained by Coulomb scattering at charged traps in the front and back-gate oxide. Exceptions to the observed trend are related to the presence of excess Generation-Recombination (GR) noise, associated with deep levels in the thin Si film.
Keywords :
Coulomb blockade; MOSFET; deep levels; electron mobility; elemental semiconductors; semiconductor thin films; silicon; silicon-on-insulator; Coulomb scattering; Si; UTBOX SOI nMOSFET; back-gate oxide; charged traps; deep levels; electron mobility; excess generation-recombination noise; front-back coupling; front-channel; front-gate oxide; low-frequency noise; thin Si film; ultra-thin buried oxide; variability; Correlation; Electron mobility; Low-frequency noise; MOSFETs; Scattering;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467654
