Title :
A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
Author :
Yu, H.Y. ; Tran, X.A.
Author_Institution :
South Univ. of Sci. & Technol. of China, Shenzhen, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
We report a forming-free and self-rectifying unipolar HfOx based RRAM with high performance. Highlight of the demonstrated RRAM include 1) Fab-available materials and CMOS process, 2) excellent self-rectifying behavior in LRS (>103@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices.
Keywords :
CMOS memory circuits; hafnium compounds; random-access storage; CMOS process; HfO; fab-available materials; forming-free unipolar resistive switching; high density cross point memory devices; high performance unipolar RRAM; read-out margin; self-rectifying behavior; Electrodes; Films; Hafnium compounds; Nickel; Silicon; Switches; Tin;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467660
