The thermal and electrical properties of CoMo alloys as copper adhesion/barrier layers

Author

Jing-Xuan Wang ; Wen-Zhong Xu ; Fei Chen ; Hai-Sheng Lu ; Xu Zeng ; Xin-Ping Qu

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

CoMo alloys as copper diffusion barriers were investigated in this work. The thermal stability was studied after annealing, which was measured by FPP, XRD, SEM and AES. According to the electrical test, we carried out a new p-cap structure to measure. The breakdown electrical field and C-V properties were measured at 150°C. Both the thermal test and electrical results show CoMo is a potential diffusion barrier.

Keywords

Auger electron spectroscopy; X-ray diffraction; annealing; cobalt alloys; copper; diffusion barriers; electric breakdown; scanning electron microscopy; thermal stability; AES; C-V properties; FPP; SEM; XRD; annealing; breakdown electrical field; cobalt alloy; copper adhesion-barrier layers; copper diffusion barriers; electrical properties; electrical test; temperature 150 degC; thermal properties; thermal stability; thermal test; Annealing; Electric variables measurement; Films; Metals; Silicon; Temperature measurement; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467672

Filename

6467672