Title :
Potential and drain current modeling of surrounding gate MOSFET including polysilicon depletion
Author :
Zunchao Li ; Jinpeng Xu ; Liangliang Zhang ; Lili Zhang
Author_Institution :
Dept. of Microelectron., Xi´´an Jiaotong Univ., Xi´´an, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The potential drop in the polysilicon depletion layer cannot be neglected in the modeling of the nanoscale MOSFET. A continuous potential model and a potential-based drain current model taking into account the polysilicon depletion effect are developed for the fully depleted nanoscale surrounding gate MOSFET. The performance of the derived analytical models are verified with numerical simulation.
Keywords :
MOSFET; electric potential; nanoelectronics; semiconductor device models; continuous potential model; drain current modeling; fully depleted nanoscale surrounding gate MOSFET; polysilicon depletion; potential based drain current model; potential drop; Analytical models; Electric potential; Logic gates; MOSFET circuits; Nanoscale devices; Semiconductor device modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467679
