Title :
A physics based model for NBTI in p-MOSFETs
Author :
Mahapatra, Santanu ; Goel, Nishith ; Joshi, Kishor
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A comprehensive modeling framework is proposed to explain NBTI degradation during DC stress, recovery of degradation after DC stress, and AC stress data. The framework is validated against a large body of experimental data obtained from wide variety of p-MOSFETs. Five experimental features of NBTI are identified, and explained using the proposed framework.
Keywords :
MOSFET; semiconductor device models; stress analysis; AC stress data; DC stress; NBTI degradation; comprehensive modeling framework; negative bias temperature instability; p-MOSFET; physics based model; Data models; Degradation; Predictive models; Reliability; Stress; Stress measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467688
