Title :
A Reverse Conducting IGBT with low on-state voltage and turnoff loss
Author :
Bo Jiang ; Jiang, Frank X. C. ; Zhigui Li ; Xinnan Lin
Author_Institution :
Peking Univ. Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A low on-state voltage with fast turnoff speed named CSFP (Carrier Stored Floating P-region)-RC (Reverse Conducting) IGBT is proposed in this paper. By sandwich an n layer between the p-well and n-drift as a CS (Carrier Stored) layer, the carrier concentration at the top of the drift is tremendously increased, to make the entire device doping concentration curve into the ideal PIN diode one. The on-state voltage is then sharply decreased. Because the bottom structure is not changed, the turnoff time is still the same as the conventional FP (Floating P-region)-RC-IGBT. With low on-state voltage and fast turnoff speed, shown in the simulation, an impressive energy saving CSFP-RC-IGBT was obtained.
Keywords :
insulated gate bipolar transistors; Carrier Stored Floating P-region; PIN diode one; doping concentration curve; low onstate voltage; reverse conducting IGBT; sandwich; turnoff loss; turnoff speed named CSFP; Doping; Educational institutions; Equivalent circuits; Insulated gate bipolar transistors; PIN photodiodes; Power semiconductor devices; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467701
