A Reverse Conducting IGBT with low on-state voltage and turnoff loss

A low on-state voltage with fast turnoff speed named CSFP (Carrier Stored Floating P-region)-RC (Reverse Conducting) IGBT is proposed in this paper. By sandwich an n layer between the p-well and n-drift as a CS (Carrier Stored) layer, the carrier concentration at the top of the drift is tremendously increased, to make the entire device doping concentration curve into the ideal PIN diode one. The on-state voltage is then sharply decreased. Because the bottom structure is not changed, the turnoff time is still the same as the conventional FP (Floating P-region)-RC-IGBT. With low on-state voltage and fast turnoff speed, shown in the simulation, an impressive energy saving CSFP-RC-IGBT was obtained.