Understanding effect of additives in copper electroplating filling for through silicon via

Author

Min Miao ; Yunhui Zhu ; Yuan Bian ; Xin Sun ; Shenglin Ma ; Qinghu Cui ; Xiao Zhong ; Runiu Fang ; Jing Chen ; Yufeng Jin

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

3D integration with TSVs (Through Silicon Via) is emerging as a promising technology for the next generation integrated circuits. Copper electroplating is one of the key technologies to fabricate TSVs. In this paper, void-free TSV filling was achieved using methanesulfonic based electrolyte and mushroom-like copper overburden was used as bumps after tin deposition. Effect of additives and current density in copper electroplating nucleation and filling profile was investigated. An absorption-diffusion model was employed to explain the experimental results.

Keywords

absorption; additives; copper; electrolytes; electroplating; three-dimensional integrated circuits; 3D integration; Cu; absorption-diffusion model; additive effect; copper electroplating filling; copper electroplating nucleation; current density; methanesulfonic based electrolyte; mushroom-like copper overburden; next generation integrated circuits; through-silicon-via technology; void-free TSV filling; Additives; Copper; Current density; Filling; Silicon; Through-silicon vias; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467713

Filename

6467713