A wide-locking range V-Band injection-locked frequency divider

Author

Chunyuan Zhou ; Lei Zhang ; Zhiping Yu ; He Qian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

4

Abstract

A novel injection-locked frequency divider for V-Band frequency synthesis is proposed in this paper. Thanks to the nMOS realized in triple-well technology with N-well floating, the source and its body can be connected together to get rid of the body effect and thus reduce the nMOS threshold voltage, which helps enhance the injection efficiency in the direct injection-locked frequency dividers. The proposed divider is implemented in 90-nm CMOS technology and draws only 1-mA from 0.9-V low voltage supply. The simulation results show that the proposed frequency divider can work from 52-GHz to 65-GHz with 0-dBm input power. The division bandwidth is improved by 5-GHz comparing to the conventional structures.

Keywords

CMOS integrated circuits; frequency dividers; CMOS technology; N well floating; V Band frequency synthesis; direct injection locked frequency dividers; division bandwidth; injection efficiency; nMOS threshold voltage; triple well technology; wide locking range V Band injection locked frequency divider; CMOS integrated circuits; CMOS technology; Frequency conversion; Phase locked loops; Phase noise; Threshold voltage; Transistors; CMOS; Frequency divider; injection locking; millimeter; wide-locking range;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467789

Filename

6467789