DocumentCode
598393
Title
Spintronic devices: From memory to memristor
Author
Hai Li ; Zhenyu Sun ; Xiuyuan Bi ; Wysocki, B.
Author_Institution
Dept. of Electr. & Comput. Eng., Polytech. Inst. of New York Univ., Brooklyn, NY, USA
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
4
Abstract
This paper provides a broad overview of spintronic devises with emphasis on memory and spintronic memristive systems. The operational fundamentals of spintronic devices are presented, followed by brief descriptions of magnetic tunneling junctions (MTJs), spin torque transfer RAM (STT-RAM), and spintronic memristors. Examples of spintronic applications in computing systems are given comprising multi-level cells (MLCs) and the design of a novel memristor based temperature sensor.
Keywords
magnetic tunnelling; magnetoelectronics; memristors; random-access storage; temperature sensors; MLC; MTJ; STT-RAM; magnetic tunneling junctions; memristor based temperature sensor; multilevel cells; spin torque transfer RAM; spintronic devices; spintronic memristors; Magnetic tunneling; Magnetization; Magnetoelectronics; Memristors; Random access memory; Resistance; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6467793
Filename
6467793
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