Title :
Millimeter-wave and terahertz CMOS design
Author :
Fujishima, Minoru
Author_Institution :
Grad. Sch. of Frontier Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application, however, a short-millimeter-wave band (more than 100 GHz) is used since it can potentially provide a wider frequency band. Thus, we have studied D-band (110-170 GHz) CMOS circuits to realize low-power ultrahigh-speed wireless communication. In the short-millimeter-wave band, since only an insufficient device model is provided, research has to start from device modeling. In this paper, our studies of modeling and design for D-band CMOS circuits are described. Finally, a 10 Gbps, 135 GHz wireless transceiver with a power consumption of 98 mW is demonstrated.
Keywords :
CMOS integrated circuits; high-speed integrated circuits; integrated circuit design; low-power electronics; millimetre wave integrated circuits; mobile radio; radio transceivers; D-band CMOS circuits; bandwidth 110 GHz to 170 GHz; bit rate 10 Gbit/s; frequency 135 GHz; insufficient device model; low power consumption; low-power ultrahigh-speed wireless communication; millimeter-wave CMOS design; mobile application; power 98 mW; power consumption; short-distance high-speed wireless communication; short-millimeter-wave band; terahertz CMOS design; wider frequency band; wireless transceiver; CMOS integrated circuits; Delay; Gain; Integrated circuit modeling; Receivers; Semiconductor device modeling; Wireless communication;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467820
