Title :
A novel SCR structure integrated with power clamp for ESD protection at I/O pad
Author :
Hang Fan ; Lingli Jiang ; Bo Zhang
Author_Institution :
Sch. of Microelectron. & Solid-States Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A novel area-efficient SCR structure is proposed for ESD protection at I/O pad. It is composed of two complementary SCR devices. Both of them can be triggered not only by the breakdown in embedded MOSFET like LVTSCR, but also by the parasitic capacitor between VDD and VSS. Besides, the embedded MOSFET in the novel structure can provide basic ESD protection between VDD and VSS at the cost of little additional area. The N+ and P+ connecting to I/O pad can be isolated well in normal circuit operation to enhance their latch up immunity.
Keywords :
MOSFET; clamps; electrostatic discharge; thyristors; ESD protection; I/O pad; LVTSCR; area-efficient SCR structure; complementary SCR devices; embedded MOSFET; latch up immunity; parasitic capacitor; power clamp; Clamps; Electrostatic discharges; MOS devices; MOSFET circuits; Robustness; Stress; Thyristors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467852
