Title :
Design of an ultralow-power CMOS relaxation oscillator for piezoresistive pressure sensor
Author :
Si-Bo Huang ; Jian-Guang Chen ; Feng Yang ; Yu-Hua Cheng
Author_Institution :
Shanghai Res. Inst. of Microelectron., Peking Univ., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
An ultra-low power CMOS relaxation oscillator for piezoresistive pressure sensor is presented. The sensor signal conditioning chip is powered by a 3-V lithium battery and an ultra-low power system clock generator is required for more than 10 years working lifetimes. A detailed analysis of the oscillator is derived and verified with simulation results. The oscillator operates at a typical frequency of 20 kHz and consumes 0.33uW (@VDD= 3.3V) at room temperature. The oscillator was fabricated in a 0.35um standard digital CMOS process. The final die size is about 450um*210um.
Keywords :
CMOS analogue integrated circuits; circuit simulation; clocks; lithium; low-power electronics; piezoresistive devices; pressure sensors; primary cells; radiofrequency integrated circuits; radiofrequency oscillators; relaxation oscillators; signal conditioning circuits; Li; frequency 20 kHz; lithium battery; piezoresistive pressure sensor; power 0.33 muW; sensor signal conditioning chip; size 0.35 mum; standard digital CMOS process; temperature 293 K to 298 K; ultralow power system clock generator; ultralow-power CMOS relaxation oscillator; voltage 3 V; voltage 3.3 V; CMOS integrated circuits; Generators; Hysteresis; Mirrors; Oscillators; Temperature sensors; Transistors; Clock generator; low-power; pressure sensor; relaxation oscillators;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467878
