Total ionizing dose effects on triple-gate FETs

By radiating different amount of radiation to the pseudo-MOS transistor, the corresponding I-V characterristic curve can be obtained. Additionally, the density of interface traps and the density of trapped-oxide charges which origin from the buried oxide layer of the SOI material while under radiating can be obtained using the middle band voltage analyze method. The analysis of the accumulation of the trap current in the buried oxide layer and the effect of it can be done using these parameters together with the Altal 3D device simulation software.