Title :
An overview of challenges and current status of Si-based terahertz monolithic integrated circuits
Author :
Jae-Sung Rieh ; Yongho Oh ; Daekeun Yoon ; Namhyung Kim ; Dong-Hyun Kim ; Jongwon Yun ; Hyunchul Kim ; Kiryong Song
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Challenges in the implementation of THz circuits based on Si-based technologies such as Si CMOS and SiGe HBT technologies are overviewed in this paper. Major challenges described in this work include the operation speed of Si devices, loss of Si substrate, model accuracy, uncertainty in EM simulation, and the presence of dummy patterns. Possible techniques to partly circumvent the challenges are also discussed. A review of recently reported Si-based circuits operating beyond 100 GHz is provided.
Keywords :
CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; monolithic integrated circuits; silicon; EM simulation; Si; Si CMOS; Si devices; Si substrate; Si-based technology; SiGe HBT technology; THz circuits; terahertz monolithic integrated circuit; CMOS integrated circuits; Integrated circuit modeling; Oscillators; Semiconductor device modeling; Silicon; Silicon germanium; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467961
