III-V Nanoelectronics for logic applications

Summary form only given. The sustaining of the Moore´s Law over the next decade will require not only continued scaling of the physical dimensions of the nano-devices but also performance improvement and aggressive reduction in power consumption. This will warrant multiple approaches that range from new materials (e.g. Ge, III-V) to new device structures (FINFETs, Tri-Gates) and to new transport physics (band to band tunneling). In this talk, I will present forward looking research results in harnessing compound semiconductor (III-V) materials to enhance CMOS logic, and new switching mechanism to extend CMOS logic and markedly boost the energy efficiency of future information processing systems.