• DocumentCode
    598741
  • Title

    Through silicon via impact on above BEoL Time Dependent Dielectric Breakdown

  • Author

    Frank, Timo ; Chery, E. ; Chappaz, C. ; Arnaud, Laurent ; Anghel, Lorena

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2012
  • fDate
    14-18 Oct. 2012
  • Firstpage
    41
  • Lastpage
    44
  • Abstract
    The impact of Through Silicon Via (TSV) on above BEoL dielectric reliability is studied. Time Dependent Dielectric Breakdown (TDDB) is performed on copper dual damascene combs, fabricated in a 65 nm technology node with a SiOCH low-k dielectric, and designed above 10μm diameter and 80μm thick TSVs, processed through a via-middle approach.
  • Keywords
    copper; electric breakdown; integrated circuit reliability; low-k dielectric thin films; silicon compounds; three-dimensional integrated circuits; BEoL dielectric reliability; BEoL time dependent dielectric breakdown; Cu; SiOCH; TDDB; TSV; copper dual damascene combs; low-k dielectric thin film; size 65 nm; through silicon via impact; via-middle approach; Dielectric breakdown; Dielectrics; Reliability; Silicon; Stress; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4673-2749-7
  • Type

    conf

  • DOI
    10.1109/IIRW.2012.6468916
  • Filename
    6468916
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=598741