DocumentCode
598748
Title
Series resistance: A monitor for hot carrier stress
Author
Campbell, J.P. ; Drozdov, S.A. ; Cheung, K.P. ; Southwick, Richard G. ; Ryan, J.T. ; Suehle, John S. ; Oates, Anthony S.
Author_Institution
Semicond. & Dimensional Metrol. Div., NIST, Gaithersburg, MD, USA
fYear
2012
fDate
14-18 Oct. 2012
Firstpage
157
Lastpage
160
Abstract
In this work, we examine a series resistance extraction technique which yields accurate values from singe nano-scale devices. The series resistance values, derived from this extraction technique, are shown to be sensitive to hot carrier degradation and might possibly serve as new technique to monitor reliability in advanced devices.
Keywords
MOSFET; hot carriers; nanoelectronics; semiconductor device measurement; semiconductor device reliability; stress analysis; MOSFET series resistance; hot carrier degradation; hot carrier stress; reliability monitoring; series resistance extraction technique; single nanoscale devices; Electrical resistance measurement; Hot carriers; Logic gates; Monitoring; Nanoscale devices; Resistance; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4673-2749-7
Type
conf
DOI
10.1109/IIRW.2012.6468945
Filename
6468945
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