Title :
Series resistance: A monitor for hot carrier stress
Author :
Campbell, J.P. ; Drozdov, S.A. ; Cheung, K.P. ; Southwick, Richard G. ; Ryan, J.T. ; Suehle, John S. ; Oates, Anthony S.
Author_Institution :
Semicond. & Dimensional Metrol. Div., NIST, Gaithersburg, MD, USA
Abstract :
In this work, we examine a series resistance extraction technique which yields accurate values from singe nano-scale devices. The series resistance values, derived from this extraction technique, are shown to be sensitive to hot carrier degradation and might possibly serve as new technique to monitor reliability in advanced devices.
Keywords :
MOSFET; hot carriers; nanoelectronics; semiconductor device measurement; semiconductor device reliability; stress analysis; MOSFET series resistance; hot carrier degradation; hot carrier stress; reliability monitoring; series resistance extraction technique; single nanoscale devices; Electrical resistance measurement; Hot carriers; Logic gates; Monitoring; Nanoscale devices; Resistance; Stress;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4673-2749-7
DOI :
10.1109/IIRW.2012.6468945
