Experimentally demonstrated filament-based switching mechanism for Al/CuxO/Cu memristive devices

Al/Cu_xO/Cu memristive devices created via a plasma oxidation step have previously demonstrated complete nonpolar switching behavior [1]. An additional material contamination control measure resulted in improved uniformity of I-V curve behavior but necessitated an initial forming step in most devices. The operation voltages were irrespective of switching style and top electrode (TE) size. The high resistance state resistance increased with decreasing TE size; the low resistance state resistance remained invariant. Lateral switching of memristive device pairs unambiguously indicated filament-based device switching. A voltage-driven Cu_xO filament composition modulation switching mechanism is suggested instead of the popular Joule heating RESET mechanism.