Title :
Electrical characterization of through-silicon vias (TSV) with different physical configurations
Author :
Wen-Sheng Zhao ; Yong-Xin Guo ; Wen-Yan Yin
Author_Institution :
Zhejiang Provincial Key Lab. for Sensing Technol., Zhejiang Univ., Hangzhou, China
Abstract :
Through-silicon vias (TSV) have been proposed to enable the “More-than-Moore” technology. In this paper, comparative studies on TSVs with different configurations are carried out based on their equivalent circuit model, with their electrical performance variations characterized together with coupling capacitance and conductance treated appropriately.
Keywords :
equivalent circuits; three-dimensional integrated circuits; coupling capacitance; coupling conductance; electrical performance variations; equivalent circuit model; more-than-Moore technology; through silicon vias; Capacitance; Couplings; Equivalent circuits; Integrated circuit modeling; Resistance; Silicon; Through-silicon vias;
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2012 IEEE
Conference_Location :
Taipei
Print_ISBN :
978-1-4673-1444-2
Electronic_ISBN :
978-1-4673-1445-9
DOI :
10.1109/EDAPS.2012.6469384
