The temperature dependent ideality factor effect on I–V characteristics of Schottky diode

The current-voltage (I-V) characteristics of Schottky contacts grown by thermal evaporated indium on a p type chemically cleaned silicon <;100> crystalline materials have been measured over the temperature range of 120-360K. Their analysis based on the thermionic emission theory (TE) has revealed that an abnormal decreases of zero bias barrier heights and increase ideality factor at lower temperatures. The temperature dependent ideality factors which is a non- physical parameter are extracted and their correlation show that the interface imperfection with the average value of zero bias barrier height and the standard deviation σ. The temperature dependent (I-V) characteristics have shown the presence of non linearity in the Arhenius and Richardson plot. This signifies a strong temperature dependent component in the ideality factor. The modified Richardson plot gives a good straight line, better estimation of effective barrier height.