Simulation of ion implantation for CMOS 1µm using SILVACO tools

One micron gate-length LDD-CMOS (Lightly Doped Drain - Complementary Metal Oxide Semiconductor) technology uses N and P-MOSFETs, realized on the same substrate, in a way to benefit simultaneously from a combination of their characteristics. Some regions of these transistors like the Wells and the Source/Drain are created by a reliable technique called ion implantation. The aim of this paper is to simulate the ion implantation steps included in the LDD-CMOS 1 micron process which has been acquired by CDTA ( Centre for Development of Advanced Technologies) from ISiT (Fraunhofer-Institut für Siliziumtechnologie). The process simulation framework ATHENA of the TCAD (Technology Computer Aided Design) SILVACO´s software was employed to simulate our process and extract some process technology parameters, such as P+ and N+ doping concentrations as well as the ion implantation energies and doses, and the corresponding junction depths.