New method for determination of the diode parameters in the presence of the leakage currents

Author

Mahi, K. ; Messani, B. ; Mechraoui, S. ; Ait Kaci, H.

Author_Institution

Physics of Plasmas and Conductors Materials and their Applications Laboratory (P.P.C.M.A.L), Department of Physics, B.P.1505 El M´´Naouar, Oran, Algeria

fYear

2012

fDate

16-20 Dec. 2012

Firstpage

1

Lastpage

4

Abstract

Characteristic parameters of a device with p-n junction, namely the ideality factor n, the saturation current Is, and the Shunt resistance Rsh. These parameters give a first idea of the conduction phenomena. They also inform about the performances of the device and the possibilities of optimization of its operation. In this paper, a new method for numerical extraction of the diode parameters (these parameters are the usually the saturation current, the ideality factor and the shunt resistance), has been investigated. The method is based on calculating the differentiation of the current-voltage function. The validity of this method has been confirmed by the way of current-voltage measurements of a commercial silicon sample. Results from a numerical extraction of these parameters are presented, and these results were considered in good agreement

Keywords

Diode; I–V characteristics; Ideality factor; Saturation current and the shunt resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2012 24th International Conference on

Conference_Location

Algiers, Algeria

Print_ISBN

978-1-4673-5289-5

Type

conf

DOI

10.1109/ICM.2012.6471421

Filename

6471421