DocumentCode
599562
Title
Numerical modeling of MOS transistor using implicit finite different-time domain method
Author
Labiod, Samir ; Latreche, Saida ; Smali, Billel ; Beghoul, M.R. ; Gontrand, C.
Author_Institution
Laboratory of Hyperfrequency and Semiconductor (LHS), Electronic department faculty of sciences engineering, Mentouri, Constantine University, 25000, Algeria
fYear
2012
fDate
16-20 Dec. 2012
Firstpage
1
Lastpage
4
Abstract
In this work, we present a numerical modeling for a MOS transistor device. This motivated the present comprehensive study of its operations by accurate 2-D numerical simulations. All simulations codes are implemented using MATLAB code simulator. The numerical model is based on a finite-difference approximation of drift-diffusion model (DDM), which contains the Poisson equation and the carrier transport equations. The proposed algorithm provides the time and space distribution of the unknown functions electrostatic potential, carriers´ concentration, current density for the MOS transistor. Finally, the obtained results are presented and show a good agreement with numerical simulations using finite element software (ISE-TCAD software).
Keywords
Drift-Diffusion Model; Finite difference method; Gummel´s method;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics (ICM), 2012 24th International Conference on
Conference_Location
Algiers, Algeria
Print_ISBN
978-1-4673-5289-5
Type
conf
DOI
10.1109/ICM.2012.6471426
Filename
6471426
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