Title :
Safe operating area of a 0.15µm GaAs PHEMT in overdrive operating conditions
Author :
Ismail, Nur ; Kalboussi, A.
Author_Institution :
Lab. of Microelectron. & Instrum., Univ. of Monastir, Monastir, Tunisia
Abstract :
We present an evaluation of the safe operating area of a 0.15 μm GaAs PHEMT operating under overdrive conditions. The approach, used to delimit the device safe operating area, consists on performing on-state and off-state accelerated DC step stresses for bias conditions included in the device breakdown region. The accelerated DC stresses have induced weak degradations of the device electrical parameters attributed to trap effects.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; semiconductor device breakdown; DC step stresses; PHEMT; accelerated DC stresses; device breakdown region; device electrical parameters; high electron mobility transistors; overdrive operating conditions; safe operating area; size 0.15 mum; trap effects; Current measurement; Degradation; Electric breakdown; Logic gates; PHEMTs; Performance evaluation; Stress; FETs; breakdown voltage; gallium arsenide; reliability;
Conference_Titel :
Microelectronics (ICM), 2012 24th International Conference on
Conference_Location :
Algiers
Print_ISBN :
978-1-4673-5289-5
DOI :
10.1109/ICM.2012.6471437
