Title :
Comparative study of ZnS thin films grown by chemical bath deposition and magnetron sputtering
Author :
Islam, M.A. ; Hossain, M. Shamim ; Aliyu, M.M. ; Sulaiman, Y. ; Karim, Muhammad Rezaul ; Sopian, K. ; Amin, N.
Author_Institution :
Solar Energy Res. Inst., Nat. Univ. of Malaysia, Bangi, Malaysia
Abstract :
Zinc sulphide thin films have been deposited on FTO coated glass substrates using the sputtering and chemical bath deposition techniques. ZnS thin film is at first grown by CBD using a aqueous solution of thioria, ammonia, ammonium chloride and zinc chloride, respectively; whereas ZnS thin film is also grown from sputtering technique at a substrate temperature 300 °C. The grown films from the both processes were annealed in a vacuum furnace of nitrogen ambient with pressure 250-300 mTorr. A comparative study of structural and optical study of these films was carried out by means of XRD, AFM and UV-Vis spectrometry. It has been found that the films in both processes are polycrystalline in nature having the (200) preferential orientation. The crystallite grain size, lattice constant, microstrain and dislocation densities of the films are quite different in both processes as observed from XRD analysis. Surface structure and topography were observed from the AFM images. The higher r.m.s values of surface roughness as well as bigger grains are observed in CBD grown ZnS thin films. The band gap has been found 3.58 and 3.54eV for the films prepared from CBD and sputtering, respectively.
Keywords :
II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; dislocation density; energy gap; grain size; lattice constants; liquid phase deposition; organic compounds; semiconductor growth; semiconductor thin films; sputter deposition; surface roughness; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; AFM imaging; CBD; FTO coated glass substrate; SnO2:F-SiO2; UV-Vis spectrometry; XRD analysis; ZnS; ammonia; ammonium chloride; annealed processing; aqueous thioria solution; chemical bath deposition; crystallite grain size; dislocation density; electron volt energy 3.54 eV; electron volt energy 3.58 eV; lattice constant; magnetron sputtering; microstrain density; polycrystalline processing; pressure 250 mtorr to 300 mtorr; sputtering deposition technique; surface roughness; surface structure topography; temperature 300 degC; thin film growth; vacuum furnace; zinc chloride; CBD; Sputtering; ZnS thin films;
Conference_Titel :
Electrical & Computer Engineering (ICECE), 2012 7th International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1434-3
DOI :
10.1109/ICECE.2012.6471491