DocumentCode :
599714
Title :
First principle calculation of electronic and optical properties of InP
Author :
Siraji, Ashfaqul Anwar ; Alam, Md Shamsul
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol. (BUET), Dhaka, Bangladesh
fYear :
2012
fDate :
20-22 Dec. 2012
Firstpage :
518
Lastpage :
521
Abstract :
We investigate the electronic and optical properties of InP in the zincblende phase using a plane wave basis with local density approximation (LDA). The Kohn Sham bandstructure of InP is obtained, from which the bandgap of the material is calculated. The density of states (DOS) of the two atoms of InP are also obtained. The complex dielectric function of InP is obtained from the derivative of the wave function with respect to the wave vectors in three dimension. The peaks in the spectrum of the complex part of the complex dielectric function are explained on the basis of the DOS. Refractive index, extinction coefficient and reflectivity of InP are also computed from the complex dielectric function.
Keywords :
III-V semiconductors; density functional theory; dielectric function; electronic density of states; energy gap; indium compounds; reflectivity; refractive index; wave functions; DOS; InP; Kohn Sham bandstructure; complex dielectric function; density of states; electronic property; extinction coefficient; local density approximation; material bandgap; optical property; plane wave basis; reflectivity; refractive index; wave function; wave vectors; zincblende phase; Dielectrics; High-speed optical techniques; Indium phosphide; Optical imaging; Optical refraction; Optical variables control; Photonic band gap; First Principle; InP; Kohn-Sham bandstructure; LDA; optical properties;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical & Computer Engineering (ICECE), 2012 7th International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1434-3
Type :
conf
DOI :
10.1109/ICECE.2012.6471601
Filename :
6471601
Link To Document :
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