Title :
InGaSb based n-MOSFET: Modeling and performance analysis
Author :
Islam, Md Shariful ; Nayeem, Md O. G. ; Alam, Md Nur Kutubul ; Islam, Md Rafiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh
Abstract :
In this paper, InGaSb based n-MOSFET model is proposed under unstrained, and 0.7% and 1.7% compressive strained conditions. Using well known Silvacos´s ATLAS device simulator the ID-VG, ID-VDS, mobility, subthreshold swing and threshold voltage characteristics are simulated and analyzed. The performance of the strained structure is found to be better then the unstrained structure. It also found that the device performances have strong temperature dependent. The propose device structure shows highest drain current and highest mobility compared to recently published experimental results for InGaSb-based p-MOSFET.
Keywords :
MOSFET; gallium compounds; indium compounds; InGaSb; Silvacos ATLAS device simulator; drain current; mobility characteristics; n-MOSFET model; performance analysis; strained structure; subthreshold swing characteristics; threshold voltage characteristics; unstrained structure; Electron mobility; Logic gates; MOSFET; MOSFET circuits; Materials; Strain; Threshold voltage; Compressive strain; High drain current; High mobility; InGaSb based n-MOSFET;
Conference_Titel :
Electrical & Computer Engineering (ICECE), 2012 7th International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1434-3
DOI :
10.1109/ICECE.2012.6471637
