Title :
Off current modeling of a tunnel field effect transistor
Author :
Islam, Md Shariful ; Ahmed, Khandakar ; Elahi, M.M.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
A tunnel field effect transistor (TFET) is characterized specially by its low off current and high on current to off current ratio. For a nanoscale TFET, the off current is primarily band to band tunneling current. Off current expression in TFET is derived in this paper and device simulation has been performed using SILVACO ATLAS. The analytical expression matches closely with the simulation results for different drain voltages with zero gate voltage.
Keywords :
field effect transistors; tunnel transistors; SILVACO ATLAS; analytical expression; band to band tunneling current; device simulation; drain voltages; nanoscale TFET; off current modeling; tunnel field effect transistor; zero gate voltage; Analytical models; Electric fields; Electric potential; Field effect transistors; Logic gates; Temperature dependence; Tunneling; Kane´s model; band to band tunneling; reverse saturaion current; tunnel field effect transistor; tunneling path;
Conference_Titel :
Electrical & Computer Engineering (ICECE), 2012 7th International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1434-3
DOI :
10.1109/ICECE.2012.6471675
