DocumentCode
599784
Title
Off current modeling of a tunnel field effect transistor
Author
Islam, Md Shariful ; Ahmed, Khandakar ; Elahi, M.M.M.
Author_Institution
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fYear
2012
fDate
20-22 Dec. 2012
Firstpage
814
Lastpage
817
Abstract
A tunnel field effect transistor (TFET) is characterized specially by its low off current and high on current to off current ratio. For a nanoscale TFET, the off current is primarily band to band tunneling current. Off current expression in TFET is derived in this paper and device simulation has been performed using SILVACO ATLAS. The analytical expression matches closely with the simulation results for different drain voltages with zero gate voltage.
Keywords
field effect transistors; tunnel transistors; SILVACO ATLAS; analytical expression; band to band tunneling current; device simulation; drain voltages; nanoscale TFET; off current modeling; tunnel field effect transistor; zero gate voltage; Analytical models; Electric fields; Electric potential; Field effect transistors; Logic gates; Temperature dependence; Tunneling; Kane´s model; band to band tunneling; reverse saturaion current; tunnel field effect transistor; tunneling path;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical & Computer Engineering (ICECE), 2012 7th International Conference on
Conference_Location
Dhaka
Print_ISBN
978-1-4673-1434-3
Type
conf
DOI
10.1109/ICECE.2012.6471675
Filename
6471675
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