Nanowires for solar cell applications

Author

Fontcuberta i Morral, A.

Author_Institution

Lab. of Semicond. Mater., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

27

Lastpage

28

Abstract

We present the method for growing GaAs nanowires by MBE without using gold as a catalyst. With careful choice of the growth parameters nanowires with length of several microns and diameters in the range of 20 nm up to 120 nm are obtained. By changing the growth conditions it is also possible to obtain radial and axial heterostructures. In view of using nanowires for photovoltaic applications, we will present the latest developments on the doping mechanisms of GaAs nanowires by MBE. Finally, we show how the fabrication of p-i-n junctions can be used for solar cell applications.

Keywords

III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; nanowires; semiconductor doping; semiconductor heterojunctions; solar cells; GaAs; MBE; axial heterostructures; catalyst; doping mechanisms; growth conditions; growth parameters; nanowires; p-i-n junctions; photovoltaic applications; radial heterostructures; size 20 nm to 120 nm; solar cell applications; Doping; Gallium arsenide; Gold; Molecular beam epitaxial growth; Nanowires; Photovoltaic cells; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472343

Filename

6472343