Title :
Nanowires for solar cell applications
Author :
Fontcuberta i Morral, A.
Author_Institution :
Lab. of Semicond. Mater., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
Abstract :
We present the method for growing GaAs nanowires by MBE without using gold as a catalyst. With careful choice of the growth parameters nanowires with length of several microns and diameters in the range of 20 nm up to 120 nm are obtained. By changing the growth conditions it is also possible to obtain radial and axial heterostructures. In view of using nanowires for photovoltaic applications, we will present the latest developments on the doping mechanisms of GaAs nanowires by MBE. Finally, we show how the fabrication of p-i-n junctions can be used for solar cell applications.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; nanowires; semiconductor doping; semiconductor heterojunctions; solar cells; GaAs; MBE; axial heterostructures; catalyst; doping mechanisms; growth conditions; growth parameters; nanowires; p-i-n junctions; photovoltaic applications; radial heterostructures; size 20 nm to 120 nm; solar cell applications; Doping; Gallium arsenide; Gold; Molecular beam epitaxial growth; Nanowires; Photovoltaic cells; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472343
