• DocumentCode
    599837
  • Title

    Growth of InP nanowires on silicon using a thin buffer layer

  • Author

    Fonseka, H.A. ; Tan, H.H. ; Kang, Joseph H. ; Paiman, S. ; Gao, Q. ; Parkinson, P. ; Jagadish, C.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    43
  • Lastpage
    44
  • Abstract
    InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate.
  • Keywords
    III-V semiconductors; indium compounds; nanowires; nucleation; photoluminescence; silicon; InP; Si; initial nucleation layer; nanowire; photoluminescence; silicon; thin intermediate buffer layer; Buffer layers; Indium phosphide; Morphology; Nanowires; Silicon; Substrates; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472351
  • Filename
    6472351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599837