• DocumentCode
    599838
  • Title

    InP nanowires grown by SA-MOVPE

  • Author

    Gao, Q. ; Tan, H.H. ; Fu, L. ; Parkinson, P. ; Breuer, Stefan ; Wong-Leung, J. ; Jagadish, C.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    45
  • Lastpage
    46
  • Abstract
    A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.
  • Keywords
    III-V semiconductors; MOCVD; indium compounds; nanowires; photoluminescence; vapour phase epitaxial growth; InP; SA-MOVPE; high quality InP nanowires; optical quality; selective-area metal-organic vapour-phase epitaxy; systematic growth temperature study; temperature 300 K; time-resolved photoluminescence; Charge carrier lifetime; Epitaxial growth; Indium phosphide; Nanowires; Optical imaging; Optical variables measurement; Radiative recombination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472352
  • Filename
    6472352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599838