• DocumentCode
    599844
  • Title

    The 1D g-factor and 0.7 anomaly in QPCs with independent control over density

  • Author

    Burke, A.M. ; Klochan, O. ; Hamilton, A.R. ; Farrer, I. ; Ritchie, D.A. ; Micolich, A.P.

  • Author_Institution
    Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    57
  • Lastpage
    58
  • Abstract
    We report the dependence of the 1D Landé g-factor g* on electron density in quantum point contacts (QPCs). We obtain g* values up to 2.8 significantly exceeding previous values for Al-GaAs/GaAs QPCs and approaching that in InGaAs/InP QPCs.
  • Keywords
    electron density; g-factor; gallium arsenide; indium compounds; quantisation (quantum theory); quantum point contacts; 1D Landé g-factor; InGaAs-InP; QPC; electron density; quantum point contact; Gallium arsenide; HEMTs; Logic gates; MODFETs; Magnetic field measurement; Polyimides; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472358
  • Filename
    6472358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599844