Diffusion and population dynamics of excitons in c-axis grown ZnO quantum wells

Author

Hall, C.R. ; Richards, G. ; Tollerud, J. ; Tan, H.H. ; Jagadish, C. ; Koike, K. ; Sasa, S. ; Inoue, M. ; Yano, M. ; Davis, Jeremy A.

Author_Institution

Centre for Atom Opt. & Ultrafast Spectrosc., Swinburne Univ. of Technol., Hawthorn, VIC, Australia

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

59

Lastpage

60

Abstract

In this work a transient grating experiment was used to explore the inplane transport properties and two-colour pump-probe and time resolved photolu-minescence experiments were used to explore the population dynamics of excitons in ZnO quantum wells. By implementing stepped barriers in such quantum wells we also show that the overlap of the electron and hole wavefunctions can be controlled.

Keywords

III-V semiconductors; electrons; excitons; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; ZnO; electron; excitons; hole wavefunctions; inplane transport properties; quantum wells; time resolved photoluminescence; transient grating experiment; two-colour pump-probe; Electric fields; Excitons; Radiative recombination; Sociology; Statistics; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472359

Filename

6472359