• DocumentCode
    599848
  • Title

    Non-equivalent zigzag edge stresses for 2D binary compound honeycomb nanoribbons

  • Author

    Deng, Jiansong ; Liu, J.Z. ; Medhekar, N.V.

  • Author_Institution
    Dept. of Mater. Eng., Monash Univ., Clayton, VIC, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    The edge stresses, which are responsible for all physical properties of nanoribbons, always involve two sided non-equivalent edge effects for zigzag honeycomb nanoribbons of two dimensional binary compounds such as BN and MoS2. In present work, we develop an approach to determine the edge stresses of individual non-equivalent zigzag edges. For prototypical system of BN zigzag nanoribbon, the edge stresses of N-terminated and B-terminated zigzag edge are determined. Using this approach, even the edge stresses for particular passivated edges observed in MoS2 nanoribbons are able to be obtained as well. The key results presented here are published in Ref. [1].
  • Keywords
    III-V semiconductors; ab initio calculations; boron compounds; elasticity; honeycomb structures; molybdenum compounds; nanoribbons; wide band gap semiconductors; 2D binary compound; B-terminated zigzag edge; BN; MoS2; N-terminated zigzag edge; continuum elasticity model; first principles calculations; honeycomb nanoribbons; nonequivalent zigzag edge stresses; passivated edges; Compounds; Computational modeling; Educational institutions; Materials; Potential energy; Strain; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472362
  • Filename
    6472362