Study of uniformly doped graphene nanoribbon transistor (GNR) FET using quantum simulation

Author

Akhavan, N.D. ; Jolley, G. ; Membreno, G.U. ; Antoszewski, J. ; Faraone, L.

Author_Institution

Microelectron. Res. Group, Univ. of Western Australia, Perth, WA, Australia

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

67

Lastpage

68

Abstract

In this paper we study the performance of uniformly doped graphene nanoribbon FET (GNRFET). Three-dimensional quantum mechanical simulations based on the NEGF formalism have been used in the presence of electron-phonon interaction to study the performance of GNRFET. We found out that uniformly doped GNRFET increases the mobility and performance of GNRFET device compare to conventionally undoped graphene.

Keywords

electron mobility; electron-proton interactions; field effect transistors; graphene; nanoribbons; quantum theory; semiconductor doping; GNR FET; GNRFET device; NEGF formalism; electron-phonon interaction; mobility; quantum simulation; three-dimensional quantum mechanical simulations; undoped graphene; uniformly doped GNRFET; uniformly doped graphene nanoribbon FET; uniformly doped graphene nanoribbon transistor; Doping; Field effect transistors; Graphene; Logic gates; Phonons; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472363

Filename

6472363